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| BUZ 325 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 325 VDS 400 V ID 12.5 A RDS(on) 0.35 Package TO-218 AA Ordering Code C67078-S3118-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12.5 Unit A ID IDpuls 50 TC = 27 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12.5 13 mJ ID = 12.5 A, VDD = 50 V, RGS = 25 L = 7.5 mH, Tj = 25 C Gate source voltage Power dissipation 670 VGS Ptot 20 125 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 325 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 400 3 0.1 10 10 0.28 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 400 V, VGS = 0 V, Tj = 25 C VDS = 400 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.35 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 8 A Semiconductor Group 2 07/96 BUZ 325 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 8 9.8 1900 260 110 - S pF 2500 400 170 ns 30 45 VDS 2 * ID * RDS(on)max, ID = 8 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 90 135 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 350 465 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 100 135 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 325 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1 450 6.8 12.5 50 V 1.5 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 25 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 325 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 13 A 11 130 W 110 Ptot 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 160 ID 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 t = 3.1s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 A 10 s K/W 10 1 DS (o n) =V DS /I ID 100 s ZthJC 10 0 D R 1 ms 10 -1 10 ms D = 0.50 0.20 10 0 0.10 10 -2 DC single pulse 0.05 0.02 0.01 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 325 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 28 A 24 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 1.1 Ptot = 125W l kj ih g [V] V f GS a b 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS (on) 0.9 0.8 0.7 0.6 0.5 a b c d e ID 22 20 18 16 14 d e c d e f g h i 12 10 8 6 4 2 0 0 a b c f j k l 0.4 0.3 0.2 VGS [V] = j g h i k 0.1 0.0 V 22 0 4 8 12 16 a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 4 8 12 16 20 A 26 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 22 A 18 \SYMBOL.ID\ 16 14 12 10 8 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 15 S 13 gfs 12 11 10 9 8 7 6 5 6 4 2 0 0 1 2 3 4 5 6 7 8 V VGS 10 4 3 2 1 0 0 2 4 6 8 10 12 14 16 A 20 ID Semiconductor Group 6 07/96 BUZ 325 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 8 A, VGS = 10 V 1.4 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 1.2 98% RDS (on) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 VGS(th) 3.6 3.2 2.8 2.4 2.0 typ 2% 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C 10 0 A Ciss IF 10 1 Coss 10 -1 Crss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 325 Avalanche energy EAS = (Tj ) parameter: ID = 12.5 A, VDD = 50 V RGS = 25 , L = 7.5 mH 700 mJ 600 Typ. gate charge VGS = (QGate) parameter: ID puls = 21 A 16 V EAS 550 500 450 400 350 300 250 200 VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 4 150 100 50 0 20 2 0 40 60 80 100 120 C 160 0 20 40 60 80 100 120 nC 150 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 325 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96 |
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